1/9 august 2000 irf620 irf620fp n-channel 200v - 0.6 w - 6a to-220/fp powermesh?ii mosfet (1)i sd 6a, di/dt 300a/s, v dd v (br)dss , t j t jmax. (**) limited only by maximum temperature allowed internal schematic diagram n typical r ds (on) = 0.6 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drives absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d irf620 irf620fp 200 v 200 v < 0.8 w < 0.8 w 6 a 6 a symbol parameter value unit irf620 irf620fp v ds drain-source voltage (v gs = 0) 200 v v dgr drain-gate voltage (r gs = 20 k w ) 200 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 6 6 (**) a i d drain current (continuous) at t c = 100c 3.8 3.8 (**) a i dm ( l ) drain current (pulsed) 24 24 a p tot total dissipation at t c = 25c 70 30 w derating factor 0.56 0.24 w/c dv/dt (1) peak diode recovery voltage slope 5 5 v/ns v iso insulation winthstand voltage (dc) -- 2000 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c 1 2 3 to-220 1 2 3 to-220fp
irf620 / fp 2/9 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 1.79 4.17 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 160 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3 a 0.6 0.8 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10 v 6a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =3a 1.5 4 s c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 350 pf c oss output capacitance 70 pf c rss reverse transfer capacitance 35 pf
3/9 irf620 / fp electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 100 v, i d = 3 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 18 ns t r rise time 30 ns q g total gate charge v dd = 160 v, i d = 6 a, v gs = 10 v 19 27 nc q gs gate-source charge 4.5 nc q gd gate-drain charge 7.5 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 160 v, i d = 6 a, r g =4.7 w, v gs = 10 v (see test circuit, figure 5) 40 ns t f fall time 10 ns t c cross-over time 65 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 6 a i sdm (2) source-drain current (pulsed) 24 a v sd (1) forward on voltage i sd = 6 a, v gs = 0 1.5 v t rr reverse recovery time i sd =6 a, di/dt = 100 a/s v dd = 100 v, t j = 150c (see test circuit, figure 5) 155 ns q rr reverse recovery charge 700 nc i rrm reverse recovery current 9 a safe operating area for to-220 safe operating area for to-220fp
irf620 / fp 4/9 transconductance transfer characteristics output characteristics thermal impedence for to-220 static drain-source on resistance thermal impedence for to-220fp
5/9 irf620 / fp capacitance variations normalized on resistance vs temperature source-drain diode forward characteristics normalized gate threshold voltage vs temp. gate charge vs gate-source voltage
irf620 / fp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 irf620 / fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
irf620 / fp 8/9 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
9/9 irf620 / fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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